PART |
Description |
Maker |
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp. Panasonic Corporation Panasonic Semiconductor
|
TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
MIE-546A2U 546A2U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (UL Listed)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
MIE-11RG1 11RG1 |
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE 砷化镓角度看包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
OP130 OP13006 |
Hermetic Infrared Emitting Diode
|
OPTEK Technologies
|